US 12,278,303 B1
Solar cell and photovoltaic module
Zhao Wang, Haining (CN); Hao Jin, Haining (CN); Mengchao Shen, Haining (CN); Jiajia Zhu, Haining (CN); Jie Yang, Haining (CN); and Xinyu Zhang, Haining (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed by ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed on Feb. 20, 2024, as Appl. No. 18/582,627.
Claims priority of application No. 202311738973.0 (CN), filed on Dec. 15, 2023.
Int. Cl. H01L 31/068 (2012.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01)
CPC H01L 31/068 (2013.01) [H01L 31/022425 (2013.01); H01L 31/02363 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a substrate having a first surface and a second surface opposite to each other;
a first dielectric layer formed on the first surface;
a first doped polysilicon layer formed on the first dielectric layer, wherein the first doped polysilicon layer is doped with an N-type doping element and has a surface facing away from the first dielectric layer and having a first roughness;
a second dielectric layer formed on the second surface;
a second doped polysilicon layer formed on the second dielectric layer, wherein the second doped polysilicon layer is doped with a P-type doping element and has a surface facing away from the second dielectric layer and having a second roughness, and wherein the second roughness is less than the first roughness;
a first passivation layer formed on the first doped polysilicon layer;
a second passivation layer formed on the second doped polysilicon layer;
first electrodes penetrating the first passivation layer to be electrically connected to the first doped polysilicon layer; and
second electrodes penetrating the second passivation layer to be electrically connected to the second doped polysilicon layer;
wherein the first doped polysilicon layer includes a plurality of first silicon grains, and surfaces of the plurality of first silicon grains form the surface of the first doped polysilicon layer having the first roughness, wherein the second doped polysilicon layer includes a plurality of second silicon grains, and surfaces of the plurality of second silicon grains form the surface of the second doped polysilicon layer having the second roughness, and wherein an average line length of the plurality of first silicon grains is less than an average line length of the plurality of second silicon grains; and
wherein the solar cell further includes electrode regions and non-electrode regions which are alternatingly arranged, the first dielectric layer and the first doped polysilicon layer are formed in the electrode regions, and the first passivation layer is formed in the electrode regions and the non-electrode regions, wherein the first surface has first textured structures in the electrode regions, and the first dielectric layer is formed on the first textured structures, and wherein the first surface has second textured structures in the non-electrode regions, and the first passivation layer is further formed on the second textured structures.