a semiconductor substrate having a base region of an n-type;

an emitter region having a p-type, the emitter region being formed on a front surface of the semiconductor substrate;

a plurality of back surface field regions having the n-type and a doping concentration higher than the base region, the plurality of back surface field regions being locally formed on a back surface of the semiconductor substrate and separated from each other so that the base region is located between the plurality of back surface field regions from the back surface of the semiconductor substrate;

a first passivation layer formed on the emitter region;

a plurality of first electrodes connected to the emitter by penetrating through the first passivation layer;

a second passivation layer and a capping film formed in sequence on the back surface of the semiconductor substrate; and

a plurality of second electrodes connected to the plurality of back surface field regions, respectively, by penetrating through the second passivation layer,

wherein the base region has a specific resistance of 0.76 Ωcm or more and less than 1.05 Ωcm,

wherein the plurality of the back surface field regions have a sheet resistance of 5 Ω/sq to 90 Ω/sq,

wherein a ratio of a total area of the plurality of back surface field regions to a total area of the semiconductor substrate is 1:10 to 29:100 or 39:100 to less than 1:2,

wherein the plurality of back surface field regions have a doping concentration of 3×10¹⁵/cm³ to 15×10¹⁵/cm³,

wherein the plurality of second electrodes includes a plurality of finger electrodes extending in a first direction and least one bus bar electrode extending in a second direction crossing the first direction and connecting the plurality of finger electrodes, and the plurality of finger electrodes are arranged in a stripe shape, and the plurality of back surface field regions are also arranged in a stripe shape,

wherein a width of at least one of the plurality of the back surface field regions is 200 μm to 1,000 μm and a width of at least one of the plurality of second electrodes is 30 μm to 300 μm,

wherein the solar cell has a bi-facial structure that receives light to the back surface of the semiconductor substrate through the second passivation layer and receives light to the front surface of the semiconductor substrate through the first passivation layer,

wherein a separation distance between two adjacent back surface field regions of the plurality of back surface field regions formed spaced apart locally is greater than the width of the at least one of the plurality of back surface field regions, and

wherein the plurality of finger electrodes pass through the second passivation layer, and the plurality of back surface field regions have only a region formed corresponding to the plurality of finger electrodes, and

wherein the capping film is adapted to prevent a material for forming the plurality of second electrodes from diffusing into the second passivation layer in a process of forming the plurality of second electrodes, the capping film includes aluminium oxide, and the second passivation layer includes a silicon nitride film, and the capping film is the outermost film on the back surface of the semiconductor substrate.