US 12,278,296 B1
Method for manufacturing back-contact solar cell and back-contact solar cell
Xiu Feng, Zhejiang (CN); Menglei Xu, Zhejiang (CN); Jie Yang, Zhejiang (CN); and Xinyu Zhang, Zhejiang (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN)
Filed by ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN)
Filed on Feb. 29, 2024, as Appl. No. 18/592,500.
Claims priority of application No. 202311675825.9 (CN), filed on Dec. 7, 2023.
Int. Cl. H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/022441 (2013.01) [H01L 31/18 (2013.01); H01L 31/02363 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for manufacturing a back-contact solar cell, comprising:
providing a substrate having a first surface, wherein the first surface includes first regions and second regions that are alternatingly arranged in a preset direction;
forming first doping layers over the first regions, wherein a respective first doping layer is over a respective first region;
forming second doping layers over the second regions, wherein a respective second doping layer is over a respective second region, and the respective first doping layer and the respective second doping layer have different conductivity types, wherein each of the second doping layers includes two first portions and a second portion that are arranged in the preset direction, wherein the second portion is abutted on two opposite sides by the two first portions, and each first portion of the two first portions abuts a first doping layer on a side of the each first portion facing away from the second portion;
forming mask layers on respective ones of the first doping layers during forming the first doping layers over the first regions and forming the second doping layers over the second regions;
performing laser modification treatment on the second portions of the second doping layers to convert the second portions into target second doping layers, wherein the second doping layers include polysilicon, and each of the target second doping layers includes an amorphous silicon layer;
performing an etching process on the first portions and the target second doping layers to remove the first portions, such that the first doping layers are separated from the target second doping layers by gaps, wherein an etching rate at which the target second doping layers are etched is lower than an etching rate at which the first portions are etched in the etching process; and
removing the mask layers.