US 12,278,293 B2
Semiconductor device comprising a doped epitaxial layer and method of manufacturing the same
Guangmin Deng, Jiangsu (CN); and Yi Pei, Jiangsu (CN)
Assigned to GPOWER SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 17/632,697
Filed by GPOWER SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Aug. 5, 2020, PCT No. PCT/CN2020/107145
§ 371(c)(1), (2) Date Feb. 3, 2022,
PCT Pub. No. WO2021/023228, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 201910717046.8 (CN), filed on Aug. 5, 2019.
Prior Publication US 2022/0285565 A1, Sep. 8, 2022
Int. Cl. H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 29/0684 (2013.01); H01L 29/402 (2013.01); H01L 29/417 (2013.01); H01L 29/66212 (2013.01); H01L 29/66219 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a doped epitaxial layer located on one side of the substrate;
a channel layer located on one side of the doped epitaxial layer away from the substrate;
a potential barrier layer located on one side of the channel layer away from the doped epitaxial layer;
a first electrode and a second electrode located on one side of the potential barrier layer away from the channel layer, wherein the first electrode penetrates the potential barrier layer, the channel layer, and part of the doped epitaxial layer, wherein the first electrode forms a Schottky contact with the channel layer, and wherein a resistance of the part of the doped epitaxial layer in contact with the first electrode is greater than a resistance of the channel layer;
wherein the doped epitaxial layer comprises a P-type or N-type doped region, and wherein the P-type or N-type doped region is in contact with at least a part of the first electrode located within the doped epitaxial layer;
wherein the first electrode is an anode, and wherein the anode comprises a first corner and a second corner located within the doped epitaxial layer, and an anode bottom surface connecting the first corner and the second corner; and
wherein the P-type or N-type doped region envelopes at least a part of the first corner and/or the second corner of the anode located in the doped epitaxial layer.