US 12,278,290 B2
Low resistive source/backgate finFET
Ming-Yeh Chuang, McKinney, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Sep. 23, 2021, as Appl. No. 17/483,214.
Prior Publication US 2023/0091260 A1, Mar. 23, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7855 (2013.01) [H01L 29/42356 (2013.01); H01L 29/66681 (2013.01); H01L 29/66795 (2013.01); H01L 29/7816 (2013.01)] 36 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a substrate with a fin extending from a surface of the substrate, the fin including:
a source region;
a drain region;
a body region; and
the source region including:
an outer region having a first conductivity type complementary to a second conductivity type of an outer region of the body region; and
an interior-positioned conductive region having the second conductivity type.