US 12,278,285 B2
Semiconductor devices
Seungchan Yun, Incheon (KR); and Donghwan Han, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 29, 2023, as Appl. No. 18/239,677.
Application 18/239,677 is a continuation of application No. 17/038,020, filed on Sep. 30, 2020, granted, now 11,769,830.
Claims priority of application No. 10-2019-0173878 (KR), filed on Dec. 24, 2019.
Prior Publication US 2023/0411517 A1, Dec. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7827 (2013.01) [H01L 21/8221 (2013.01); H01L 21/823412 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/124 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of channel layers disposed on an active region of a substrate and spaced apart from each other in a first direction that is perpendicular to an upper surface of the substrate;
a first gate structure surrounding the plurality of channel layers;
first source/drain regions disposed on the active region on both lateral sides of the first gate structure and contacting the plurality of channel layers, the first source/drain regions being spaced apart from each other in a second direction that is parallel to the upper surface of the substrate;
an element isolation layer disposed on an upper portion of the first gate structure;
a semiconductor layer disposed on the element isolation layer, the semiconductor layer having a lower region having a planar upper surface and a vertical region protruding from the lower region in the first direction, and the semiconductor layer including second source/drain regions spaced apart from each other in the first direction;
a second gate structure disposed to surround a portion of the vertical region;
a first contact plug connected to one of the second source/drain regions by contacting the lower region; and
a second contact plug connected to other of the second source/drain regions by contacting the vertical region.