US 12,278,282 B2
High-electron mobility transistor and method for fabricating the same
Jian-Li Lin, Kaohsiung (TW); Cheng-Guo Chen, Changhua County (TW); Ta-Kang Lo, Taoyuan (TW); and Cheng-Han Wu, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 11, 2022, as Appl. No. 17/742,383.
Claims priority of application No. 202210409576.8 (CN), filed on Apr. 19, 2022.
Prior Publication US 2023/0335630 A1, Oct. 19, 2023
Int. Cl. H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/404 (2013.01); H01L 29/66462 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A high-electron mobility transistor, comprising:
a substrate comprising an active region;
a gate electrode disposed on the substrate;
a drain electrode disposed at one side of the gate electrode;
a source electrode disposed at another side of the gate electrode; and
a first field plate electrically connected with the source electrode and extends from the source electrode toward the drain electrode, wherein an overlapping area of the first field plate and the gate electrode is smaller than an overlapping area of the gate electrode and the active region.