US 12,278,281 B2
High electron mobility transistor
Sunkyu Hwang, Seoul (KR); Jaejoon Oh, Seongnam-si (KR); and Jongseob Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 15, 2021, as Appl. No. 17/475,700.
Claims priority of application No. 10-2021-0064214 (KR), filed on May 18, 2021.
Prior Publication US 2022/0376102 A1, Nov. 24, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/47 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/475 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT) including an active region, in which a channel is formed, and a field region surrounding the active region, the HEMT comprising:
a channel layer;
a barrier layer on the channel layer and configured to induce a two-dimensional electron gas (2DEG) in the channel layer;
a source and a drain spaced apart from each other in a first direction on the barrier layer in the active region; and
a gate on the barrier layer, the gate protruding from the active region to the field region, wherein
the gate comprises a first gate and a second gate,
the first gate is in the active region,
the second gate is in a boundary region of the HEMT between the active region and the field region,
a first sidewall of the second gate and a second sidewall of the second gate are opposite each other in a second direction,
the second direction crosses the first direction,
the first gate is in contact with the first sidewall of the second gate at a location over the active region,
a work function of the second gate is different from a work function of the first gate, and
the first gate is in contact with the second sidewall of the second gate or one sidewall of the first gate is coplanar with the second sidewall of the second gate.