| CPC H01L 29/66068 (2013.01) [H01L 21/0465 (2013.01)] | 3 Claims |
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1. A method of manufacturing a silicon carbide semiconductor, the method comprising:
forming a constituent layer made of silicon carbide, the constituent layer being a first conductivity type; and
forming a super junction structure including a second conductivity-type column region with a plurality of sections and a first conductivity-type column region, the second conductivity-type column region formed by conducting ion implantation to the constituent layer, the second conductivity-type column region extending in a direction as a lengthwise direction of the second conductivity-type column region, the first conductivity-type column region being a portion of the constituent layer remained between adjacent two of the sections of the second conductivity-type column region, the second conductivity-type column region and the first conductivity-type column region being alternatively and repetitively aligned in a direction intersecting the lengthwise direction, the second conductivity-type column region being a second conductivity type, the first conductivity-type column region being the first conductivity type,
wherein the forming of the super junction structure includes:
forming a film-forming mask on the constituent layer;
forming an opening portion at the film-forming mask to form an opening at a prospective forming region of the constituent layer, the prospective forming region being a region in which the second conductivity-type column region is to be formed;
forming a mask-forming trench at the constituent layer through etching by adopting the film-forming mask, and adopting a portion of the constituent layer surrounding the mask-forming trench as a silicon carbide mask having higher shielding rate of impurities than the film-forming mask;
forming the second conductivity-type column region extending in a depth direction of the constituent layer from a bottom surface of the mask-forming trench while forming an implantation region at the silicon carbide mask by conducting ion implantation of impurities and changing acceleration energy for the impurities by adopting an ion-implantation mask having the film-forming mask and the silicon carbide mask, the implantation region receiving the impurities through the ion implantation, the impurities being the second conductivity type; and
removing a portion of the constituent layer where the silicon carbide mask is formed to adopt the portion of the constituent layer remained between the adjacent two of the sections of the second conductivity-type column region as the first conductivity-type column region,
wherein, in the forming of the mask-forming trench, the implantation region is formed to have a depth terminated inside the silicon carbide mask at a time of forming the second conductivity-type column region.
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