US 12,278,267 B2
Semiconductor devices having funnel-shaped gate structures
Shu-Han Chen, Hsinchu (TW); Tsung-Ju Chen, Hsinchu (TW); Chun-Heng Chen, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 17, 2024, as Appl. No. 18/638,120.
Application 17/866,986 is a division of application No. 16/881,916, filed on May 22, 2020, granted, now 11,430,865, issued on Aug. 30, 2022.
Application 18/638,120 is a continuation of application No. 17/866,986, filed on Jul. 18, 2022, granted, now 11,990,509.
Claims priority of provisional application 62/967,237, filed on Jan. 29, 2020.
Prior Publication US 2024/0266397 A1, Aug. 8, 2024
Int. Cl. H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/0673 (2013.01) [H01L 21/0262 (2013.01); H01L 21/30604 (2013.01); H01L 21/31116 (2013.01); H01L 21/31155 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/26513 (2013.01); H01L 29/1083 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a source/drain region;
a nano-structure adjacent the source/drain region;
a gate structure wrapped around the nano-structure, the gate structure comprising:
a gate dielectric; and
a gate electrode over the gate dielectric, the gate electrode having a first portion and a second portion, the second portion disposed between the first portion and the nano-structure, a first width of the first portion increasing continually in a first direction extending away from a top surface of the nano-structure, a second width of the second portion being constant along the first direction; and
a spacer between the gate structure and the source/drain region, the gate dielectric separating the spacer from the first portion and the second portion of the gate electrode.