US 12,278,266 B2
Reverse recovery charge reduction in semiconductor devices
Shengling Deng, Chandler, AZ (US); Dean E. Probst, West Jordan, UT (US); and Zia Hossain, Tempe, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on Sep. 19, 2023, as Appl. No. 18/469,780.
Application 18/469,780 is a continuation of application No. 17/446,238, filed on Aug. 27, 2021, granted, now 11,776,997.
Application 17/446,238 is a continuation of application No. 15/959,479, filed on Apr. 23, 2018, granted, now 11,133,381, issued on Sep. 28, 2021.
Prior Publication US 2024/0014261 A1, Jan. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/868 (2006.01)
CPC H01L 29/0653 (2013.01) [H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/6634 (2013.01); H01L 29/66348 (2013.01); H01L 29/66712 (2013.01); H01L 29/7397 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01); H01L 29/868 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming, in a semiconductor region of a first conductivity type, a region of a second conductivity type, the semiconductor region defining a cathode region of a diode, the region of the second conductivity type defining an anode region of the diode, the diode having a junction at a depth below an upper surface of the semiconductor region;
forming a plurality of openings in the semiconductor region, the depth of the diode junction being constant between a first opening of the plurality of openings and a second opening of the plurality of openings, each opening of the plurality of openings extending through the anode region and terminating in the cathode region; and
forming a respective dielectric region in each of the plurality of openings, each respective dielectric region excluding a conductive electrode, and having:
an upper surface that is disposed at a depth in the anode region that is above the depth of the diode junction;
a lower surface that is disposed in the cathode region at a depth that is at or below a same depth as the diode junction; and
a first side surface and a second side surface, a distance between the first side surface and the second side surface defining a width of the respective dielectric region,
each respective dielectric region extending, at the depth of the diode junction between the first side surface and the second side surface, and
the width between the first side surface and the second side surface defining, at the depth of the diode junction, an interruption in the diode junction.