US 12,278,263 B2
Semiconductor device
Takeshi Suwa, Kawasaki Kanagawa (JP); Tomoko Matsudai, Tokyo (JP); Yoko Iwakaji, Tokyo (JP); and Hiroko Itokazu, Kawasaki Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Nov. 9, 2023, as Appl. No. 18/505,684.
Application 18/505,684 is a division of application No. 17/385,846, filed on Jul. 26, 2021, granted, now 11,862,677.
Claims priority of application No. 2021-039142 (JP), filed on Mar. 11, 2021.
Prior Publication US 2024/0072111 A1, Feb. 29, 2024
Int. Cl. H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0642 (2013.01) [H01L 29/0649 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/7831 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type, a plurality of trenches provided at a front side of the semiconductor part;
a first electrode provided at the front side of the semiconductor part; and
a plurality of control electrodes provided in the plurality of trenches, respectively, the plurality of control electrodes each being electrically insulated from the semiconductor part via an insulating film, the plurality of control electrodes including a first control electrode, and a second control electrode next to the first control electrode,
the second semiconductor layer being provided between the first semiconductor layer and the first electrode, the second semiconductor layer being provided between the first and second control electrodes, the second semiconductor layer facing the first and second control electrodes via the insulating film,
the third and fourth semiconductor layers being provided between the second semiconductor layer and the first electrode, the third and fourth semiconductor layers being electrically connected to the first electrode and arranged along a front surface of the second semiconductor layer facing the first electrode,
the semiconductor part further including a first region partially provided between the first semiconductor layer and the second semiconductor layer, the first region being provided between the first semiconductor layer and the third semiconductor layer, the first region including a material having a lower thermal conductivity than the first semiconductor layer,
the third semiconductor layer being apart from the fourth semiconductor layer,
the second semiconductor layer including a portion provided between the third semiconductor layer and the fourth semiconductor layer.