US 12,278,262 B2
Semiconductor device, and method for manufacturing semiconductor device
Katsuhisa Nagao, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Aug. 5, 2022, as Appl. No. 17/882,298.
Application 17/882,298 is a continuation of application No. 17/354,500, filed on Jun. 22, 2021, granted, now 11,862,672.
Application 17/354,500 is a continuation of application No. 16/242,744, filed on Jan. 8, 2019, granted, now 11,075,263, issued on Jul. 27, 2021.
Application 16/242,744 is a continuation of application No. 15/419,565, filed on Jan. 30, 2017, granted, now 10,211,285, issued on Feb. 19, 2019.
Application 15/419,565 is a continuation of application No. 14/384,598, granted, now 9,595,584, issued on Mar. 14, 2017, previously published as PCT/JP2013/056601, filed on Mar. 11, 2013.
Claims priority of application No. 2012-054953 (JP), filed on Mar. 12, 2012.
Prior Publication US 2022/0406887 A1, Dec. 22, 2022
Int. Cl. H01L 29/872 (2006.01); G01R 31/12 (2020.01); H01L 21/66 (2006.01); H01L 21/761 (2006.01); H01L 21/78 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01); H01L 29/47 (2006.01); H01L 29/78 (2006.01); G01R 31/26 (2020.01)
CPC H01L 29/0623 (2013.01) [G01R 31/129 (2013.01); H01L 21/761 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 29/0619 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/408 (2013.01); H01L 29/47 (2013.01); H01L 29/78 (2013.01); H01L 29/7811 (2013.01); H01L 29/872 (2013.01); G01R 31/2648 (2013.01); H01L 2224/0603 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductive-type SiC semiconductor layer having a front surface, a back surface and end surfaces connected to the front surface and the back surface, the SiC semiconductor layer having a semiconductor element structure at a side of the front surface;
a first insulating layer formed at a side of the front surface of the SiC semiconductor layer;
a surface electrode having a lower end portion connected to the front surface through a part of the first insulating layer and a drawer portion protruding above the first insulating layer and extending laterally over the first insulating layer;
a second insulating layer having an opening from which a part of the surface electrode is exposed such that the second insulating layer covers another part of the surface electrode and the first insulating layer; and
a rear electrode formed on the back surface of the SiC semiconductor layer, wherein
the second insulating layer extends to the end surface of the SiC semiconductor layer and is flush with the end surface,
the second insulating layer extends horizontally from the end surface of the SiC semiconductor layer to the surface electrode in a cross section such that the second insulating layer has a flat top portion,
a portion of the second insulating layer covering an upper part of the surface electrode is thinner than a portion of the second insulating layer covering another part of the surface electrode in a cross section, and
an outer edge portion of the surface electrode, an inner edge portion of the first insulating layer and an inner edge of the second insulating layer are arranged in this order from the end surface of the SiC semiconductor layer.