US 12,278,261 B2
Capacitor, electronic device including the same, and method of manufacturing the same
Euncheol Do, Seoul (KR); Byunghoon Na, Suwon-si (KR); and Kiyoung Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 29, 2021, as Appl. No. 17/564,699.
Claims priority of application No. 10-2021-0097212 (KR), filed on Jul. 23, 2021.
Prior Publication US 2023/0035431 A1, Feb. 2, 2023
Int. Cl. H10B 12/00 (2023.01); H01G 4/33 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/75 (2013.01) [H01G 4/33 (2013.01); H01L 28/55 (2013.01); H01L 28/91 (2013.01); H10B 12/0387 (2023.02); H10B 12/377 (2023.02)] 36 Claims
OG exemplary drawing
 
1. A capacitor comprising:
a first thin-film electrode layer;
a second thin-film electrode layer;
a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and
an interlayer between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a crystal with a structure of a same type as and a different composition from a crystal structure of at least one of the first thin-film electrode layer, the second thin-film electrode layer, or the dielectric layer,
wherein the interlayer comprises at least one of a first anionized layer, a second anionized layer, or a first neutral layer,
the first anionized layer including at least one of a monovalent cation, divalent cation, or trivalent cation of an atomic weight of 20 or more,
the second anionized layer including a monovalent cation, and
the first neutral layer including a plurality of trivalent cations, and
wherein a thickness of the interlayer is less than a thickness of the dielectric layer.