| CPC H01L 28/56 (2013.01) [H01G 4/30 (2013.01); H01L 28/65 (2013.01); H01L 28/75 (2013.01); H10N 70/231 (2023.02); H10N 70/841 (2023.02)] | 8 Claims |
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1. A capacitor comprising:
a first electrode including a first reinforcement material having a perovskite crystal structure, and a first metallic material having a perovskite crystal structure;
a second electrode on the first electrode; and
a dielectric layer between the first electrode and the second electrode,
wherein the first metallic material has a greater electronegativity than that of the first reinforcement material, and
a lowermost surface and an uppermost surface of the first electrode include the first reinforcement material.
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5. A semiconductor device comprising:
a capacitor comprising a first electrode including a first reinforcement material having a perovskite crystal structure and a first metallic material having a perovskite crystal structure, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode; and
a transistor comprising a first source/drain region electrically connected to the first electrode, a second source/drain region, and a gate structure between the first source/drain region and the second source/drain region,
wherein the first metallic material has a greater electronegativity than that of the first reinforcement material, and
a lowermost surface and an uppermost surface of the first electrode include the first reinforcement material.
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