US 12,278,259 B2
Systems and methods for shielded inductive devices
Feng Wei Kuo, Hsinchu County (TW); Chewn-Pu Jou, Hsinchu (TW); Huan-Neng Chen, Hsin-Chu (TW); Lan-Chou Cho, Hsinchu (TW); and Robert Bogdan Staszewski, Dublin (IE)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/232,332.
Application 16/908,237 is a division of application No. 15/965,476, filed on Apr. 27, 2018, granted, now 10,692,963.
Application 18/232,332 is a continuation of application No. 17/585,372, filed on Jan. 26, 2022, granted, now 11,804,515.
Application 17/585,372 is a continuation of application No. 16/908,237, filed on Jun. 22, 2020, granted, now 11,257,898.
Claims priority of provisional application 62/624,003, filed on Jan. 30, 2018.
Prior Publication US 2023/0387180 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); B01D 1/00 (2006.01); B01D 1/12 (2006.01); C02F 1/04 (2023.01); C02F 11/12 (2019.01); C02F 11/18 (2006.01); H01F 27/28 (2006.01); H01L 49/02 (2006.01); H03L 7/085 (2006.01); H03L 7/099 (2006.01); C02F 101/30 (2006.01); C02F 103/14 (2006.01); C02F 103/16 (2006.01); C02F 103/28 (2006.01); C02F 103/32 (2006.01); C02F 103/34 (2006.01); C02F 103/36 (2006.01)
CPC H01L 28/10 (2013.01) [B01D 1/0017 (2013.01); B01D 1/12 (2013.01); C02F 1/048 (2013.01); C02F 11/12 (2013.01); C02F 11/18 (2013.01); H01F 27/2885 (2013.01); H01L 23/5227 (2013.01); H03L 7/085 (2013.01); H03L 7/099 (2013.01); C02F 2101/301 (2013.01); C02F 2101/306 (2013.01); C02F 2103/14 (2013.01); C02F 2103/16 (2013.01); C02F 2103/28 (2013.01); C02F 2103/32 (2013.01); C02F 2103/343 (2013.01); C02F 2103/365 (2013.01); H03L 2207/50 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a transformer defining an inductive footprint formed within a first metallization layer of the integrated circuit;
a grounded shield formed within a second metallization layer of the integrated circuit separate from the first metallization layer; and
a circuit component formed within a third metallization layer of the integrated circuit separate from the second metallization layer, wherein:
the circuit component is coupled with the transformer through the second metallization layer,
the third metallization layer is separated from the first layer by the second metallization layer,
the circuit component is laterally surrounded by winding structures of the transformer, and
the grounded shield is laterally bounded within the inductive footprint.