US 12,278,254 B2
Band-pass filter for stacked sensor
Cheng Yu Huang, Hsinchu (TW); Chun-Hao Chuang, Hsinchu (TW); Chien-Hsien Tseng, Hsinchu (TW); Kazuaki Hashimoto, Zhubei (TW); Keng-Yu Chou, Kaohsiung (TW); Wei-Chieh Chiang, Yuanlin Township (TW); and Wen-Hau Wu, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jul. 17, 2023, as Appl. No. 18/353,266.
Application 18/353,266 is a continuation of application No. 17/506,885, filed on Oct. 21, 2021, granted, now 11,764,248.
Application 17/506,885 is a continuation of application No. 16/837,280, filed on Apr. 1, 2020, granted, now 11,158,664, issued on Oct. 26, 2021.
Application 16/837,280 is a continuation of application No. 16/163,908, filed on Oct. 18, 2018, granted, now 10,651,225, issued on May 12, 2020.
Claims priority of provisional application 62/737,321, filed on Sep. 27, 2018.
Prior Publication US 2023/0361147 A1, Nov. 9, 2023
Int. Cl. H01L 27/146 (2006.01); H01L 23/552 (2006.01); H01L 23/64 (2006.01); H01L 25/04 (2023.01)
CPC H01L 27/14643 (2013.01) [H01L 23/552 (2013.01); H01L 23/64 (2013.01); H01L 25/043 (2013.01); H01L 27/14621 (2013.01); H01L 27/14629 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/1469 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming an integrated chip structure, comprising:
forming a first image sensor element within a first substrate, wherein the first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths;
performing a plurality of deposition processes to form a band-pass filter over the first substrate, wherein the band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index; and
wherein the band-pass filter comprises a substantially flat bottommost surface that faces a first surface of the first substrate, that is over the first surface, and that laterally and continuously extends over a plurality of recesses within the first surface.