US 12,278,253 B2
Backside diode design
Kuo-Chin Huang, Yilan (TW); Tzu-Jui Wang, Fengshan (TW); Hua-Mao Chen, Tainan (TW); Chin-Chia Kuo, Tainan (TW); and Yuichiro Yamashita, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 30, 2021, as Appl. No. 17/566,183.
Claims priority of provisional application 63/154,401, filed on Feb. 26, 2021.
Prior Publication US 2022/0278161 A1, Sep. 1, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 31/107 (2006.01)
CPC H01L 27/14636 (2013.01) [H01L 27/14627 (2013.01); H01L 31/107 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first die, comprising:
a first dielectric layer;
a photodiode on a first side of the first dielectric layer and comprising a first electrode and a second electrode with a polarity opposite to that of the first electrode;
a first interconnect structure enclosed in the first dielectric layer and connected to the first electrode;
a second interconnect structure in the first dielectric layer connected to the second electrode, wherein the second interconnect structure extends to a second side of the first dielectric layer and the second side being opposite to the first side of the first dielectric layer; and
a third interconnect structure in the first dielectric layer extending to the second side of the first dielectric layer; and
a second die, comprising:
a second dielectric layer in contact with the second side of the first dielectric layer; and
a fourth interconnect structure in the second dielectric layer extending to a side of the second dielectric layer, wherein the fourth interconnect structure connects the second interconnect structure to the third interconnect structure, and wherein the first interconnect structure is separated from the second die by the first dielectric layer.