CPC H01L 27/1463 (2013.01) [H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01)] | 20 Claims |
1. A method of forming a semiconductor device, comprising:
providing a substrate having a front side and a back side opposite to each other;
forming a plurality of photodetectors in the substrate within a pixel region;
patterning the substrate from the back side of the substrate to form a first opening within the pixel region and a second opening within a periphery region;
forming a dielectric liner on sidewalls and bottom surfaces of the first and second openings;
removing a portion of the dielectric liner covering the bottom surfaces of the first and second openings;
forming a conductive material layer after the removing, wherein the conductive material layer is formed on the substrate and filling into the first and second openings, wherein the conductive material layer comprises a first conductive plug in the first opening, a second conductive plug in the second opening, and an upper portion over the back side of the substrate, and wherein the first conductive plug serves as a first portion of an isolation structure disposed between the plurality of photodetectors;
patterning the upper portion of the conductive material layer to form a conductive cap, wherein the conductive cap extends from the pixel region to the periphery region and is electrically connected to the first and second conductive plugs; and
forming a conductive contact on the second conductive plug over the front side of the substrate within the periphery region.
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