US 12,278,250 B2
Semiconductor device including image sensor and method of forming the same
Min-Feng Kao, Chiayi (TW); Dun-Nian Yaung, Taipei (TW); Jen-Cheng Liu, Hsin-Chu (TW); Hsing-Chih Lin, Tainan (TW); Feng-Chi Hung, Chu-Bei (TW); and Shyh-Fann Ting, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 17, 2021, as Appl. No. 17/321,909.
Claims priority of provisional application 63/135,085, filed on Jan. 8, 2021.
Prior Publication US 2022/0223635 A1, Jul. 14, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising:
providing a substrate having a front side and a back side opposite to each other;
forming a plurality of photodetectors in the substrate within a pixel region;
patterning the substrate from the back side of the substrate to form a first opening within the pixel region and a second opening within a periphery region;
forming a dielectric liner on sidewalls and bottom surfaces of the first and second openings;
removing a portion of the dielectric liner covering the bottom surfaces of the first and second openings;
forming a conductive material layer after the removing, wherein the conductive material layer is formed on the substrate and filling into the first and second openings, wherein the conductive material layer comprises a first conductive plug in the first opening, a second conductive plug in the second opening, and an upper portion over the back side of the substrate, and wherein the first conductive plug serves as a first portion of an isolation structure disposed between the plurality of photodetectors;
patterning the upper portion of the conductive material layer to form a conductive cap, wherein the conductive cap extends from the pixel region to the periphery region and is electrically connected to the first and second conductive plugs; and
forming a conductive contact on the second conductive plug over the front side of the substrate within the periphery region.