US 12,278,249 B2
Wave guide filter for semiconductor imaging devices
Cheng Yu Huang, Hsinchu (TW); Chun-Hao Chuang, Hsinchu (TW); Chien-Hsien Tseng, Hsinchu (TW); Kazuaki Hashimoto, Zhubei (TW); Keng-Yu Chou, Kaohsiung (TW); Wei-Chieh Chiang, Yuanlin Township (TW); Wen-Chien Yu, Hsinchu (TW); Ting-Cheng Chang, Hsinchu (TW); Wen-Hau Wu, Hsin-Chu (TW); and Chih-Kung Chang, Zhudong Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Nov. 21, 2023, as Appl. No. 18/515,829.
Application 17/579,030 is a division of application No. 16/416,583, filed on May 20, 2019, granted, now 11,233,081, issued on Jan. 25, 2022.
Application 18/515,829 is a continuation of application No. 17/579,030, filed on Jan. 19, 2022, granted, now 11,862,650.
Claims priority of provisional application 62/736,779, filed on Sep. 26, 2018.
Prior Publication US 2024/0088182 A1, Mar. 14, 2024
Int. Cl. H01L 27/06 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/14621 (2013.01) [H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming an image sensor, the method comprising:
forming an isolation structure on a semiconductor substrate;
forming a metal grid on the isolation structure;
forming a dielectric layer on the isolation structure and covering the metal grid;
forming a first light filter grid structure over the dielectric layer;
forming a first light filter in the first light filter grid structure;
forming a first interface layer over both the first light filter grid structure and the first light filter;
forming a second light filter grid structure over the first interface layer;
forming a second light filter in the second light filter grid structure;
forming a second interface layer over both the second light filter grid structure and the second light filter; and
forming an anti-reflective coating (ARC) over the second interface layer, wherein the ARC is formed with a substantially planar upper surface.