US 12,278,238 B2
Semiconductor structure and method of forming the same
Shih-Wei Peng, Hsinchu (TW); Te-Hsin Chiu, Miaoli County (TW); Wei-Cheng Lin, Taichung (TW); and Jiann-Tyng Tzeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jan. 4, 2024, as Appl. No. 18/404,874.
Application 18/404,874 is a continuation of application No. 17/846,080, filed on Jun. 22, 2022, granted, now 11,894,375.
Application 17/846,080 is a continuation of application No. 17/075,578, filed on Oct. 20, 2020, granted, now 11,374,005, issued on Jun. 28, 2022.
Prior Publication US 2024/0145475 A1, May 2, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/0922 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 23/5286 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor of a first conductivity type arranged in a first layer, the first transistor comprising:
a gate extending in a first direction; and
a first active region extending in a second direction perpendicular to the first direction;
a second transistor of a second conductivity type arranged in a second layer over the first layer, the second transistor comprising:
the gate; and
a second active region extending in the second direction; and
a first conductive line arranged in a third layer between the first layer and the second layer and extending in the second direction, the first conductive line electrically connecting a first source/drain region of the first active region to a second source/drain region of the second active region,
wherein the gate comprises an intermediate portion disposed between the first active region and the second active region, wherein the first conductive line crosses the gate at the intermediate portion.