US 12,278,235 B2
Semiconductor device with isolation structure
Shi-Ning Ju, Hsin Chiu (TW); Kuo-Cheng Chiang, Zhubei (TW); Kuan-Lun Cheng, Tainan (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 29, 2024, as Appl. No. 18/425,797.
Application 17/857,740 is a division of application No. 16/871,740, filed on May 11, 2020, granted, now 11,424,242, issued on Aug. 23, 2022.
Application 18/425,797 is a continuation of application No. 17/857,740, filed on Jul. 5, 2022, granted, now 11,923,361.
Claims priority of provisional application 62/928,654, filed on Oct. 31, 2019.
Prior Publication US 2024/0194674 A1, Jun. 13, 2024
Int. Cl. H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/0886 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66787 (2013.01); H01L 29/785 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a plurality of semiconductor nanostructures;
a gate stack wrapped around the semiconductor nanostructures;
a first epitaxial structure and a second epitaxial structure sandwiching at least one of the semiconductor nanostructures; and
an isolation structure below a bottommost surface of the semiconductor nanostructures, wherein the isolation structure is a continuous structure extending across edges of the semiconductor nanostructures and extending along opposite edges of a lower portion of the first epitaxial structure.