US 12,278,232 B2
Leakage current reduction in electrical isolation gate structures
Emre Alptekin, Santa Clara, CA (US); and Thomas Hoffmann, Los Gatos, CA (US)
Assigned to Apple Inc., Cupertino, CA (US)
Filed by Apple Inc., Cupertino, CA (US)
Filed on Sep. 7, 2022, as Appl. No. 17/930,188.
Application 17/930,188 is a continuation of application No. 16/913,770, filed on Jun. 26, 2020, granted, now 11,469,226.
Application 16/913,770 is a continuation of application No. 16/156,461, filed on Oct. 10, 2018, granted, now 10,700,065, issued on Jun. 30, 2020.
Prior Publication US 2023/0005908 A1, Jan. 5, 2023
Int. Cl. H01L 27/088 (2006.01); G06F 30/398 (2020.01); H01L 27/02 (2006.01)
CPC H01L 27/0883 (2013.01) [G06F 30/398 (2020.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first diffusion region of a first conductivity type, wherein:
the first diffusion region includes a plurality of active regions;
respective active regions of the plurality of active regions include respective pluralities of transistors;
a threshold voltage of a given respective plurality of transistors is dependent on a plurality of layers of materials in gate stacks of the given respective plurality of transistors and is further dependent on an order of the plurality of layers of materials;
a first active region of the plurality of active regions and a second active region of the plurality of active regions are separated by a single diffusion break isolation; and
the single diffusion break isolation includes a single transistor having a second threshold voltage greater than threshold voltages of transistors in the first active region and the second active region, wherein the single transistor has a single gate stack formed from a second plurality of layers of materials, wherein the second threshold voltage is dependent on the second plurality of layers of materials and the order of the second plurality of layers, wherein there is at least one difference between the plurality of layers of materials and the second plurality of layers of materials.