US 12,278,231 B2
RC snubber with poly silicon resistor and capacitor formed from junction termination edge
Dethard Peters, Hoechstadt (DE); and Guang Zeng, Haar (DE)
Assigned to INFINEON TECHNOLOGIES AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 11, 2022, as Appl. No. 17/692,509.
Prior Publication US 2023/0290773 A1, Sep. 14, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/16 (2006.01)
CPC H01L 27/0288 (2013.01) [H01L 27/0629 (2013.01); H01L 29/1608 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a junction termination edge;
a unipolar power transistor;
an RC snubber comprising:
a capacitor between a poly silicon structure and a semiconductor substrate and part of the junction termination edge, wherein the capacitor comprises a p-n junction; and
a poly silicon resistor between a source of the unipolar power transistor and a first layer forming the capacitor, wherein the poly silicon resistor includes a first part formed from the poly silicon structure and a second part formed from a poly silicon material of the unipolar power transistor, wherein the second part of the poly silicon resistor integrates the RC snubber into the unipolar power transistor;
wherein the unipolar power transistor and the RC snubber are coupled in parallel, and
wherein the RC snubber and the unipolar power transistor are formed monolithically on the semiconductor substrate.