US 12,278,211 B2
Manufacturing method of semiconductor device
Yi-Jen Lo, New Taipei (TW); Hsih Yang Chiu, Taoyuan (TW); Ching Hung Chang, Taoyuan (TW); and Chiang-Lin Shih, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Oct. 23, 2023, as Appl. No. 18/491,813.
Application 18/491,813 is a division of application No. 17/198,252, filed on Mar. 11, 2021, granted, now 11,842,979.
Prior Publication US 2024/0055390 A1, Feb. 15, 2024
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01)
CPC H01L 24/80 (2013.01) [H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/8038 (2013.01); H01L 2224/80894 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1436 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and the first device wafer and the second device wafer are the same kind of device wafer, the first bonding interface is formed by a hybrid-bonding process, and the hybrid-bonding process refers to the formation of the two different types of bonds using a single bonding process,
bonding the first device wafer to a dummy wafer, wherein a third bonding interface including a dielectric-to-dielectric bonding interface is formed between the dummy wafer and the first device wafer before the first bonding interface is formed.