US 12,278,202 B2
Modular construction of hybrid-bonded semiconductor die assemblies and related systems and methods
Bharat Bhushan, Taichung (TW); Akshay N. Singh, Boise, ID (US); Bret K. Street, Meridian, ID (US); Debjit Datta, Taichung (TW); and Eiichi Nakano, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 1, 2022, as Appl. No. 17/830,224.
Prior Publication US 2023/0395545 A1, Dec. 7, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 24/08 (2013.01) [H01L 24/80 (2013.01); H01L 24/95 (2013.01); H01L 25/0652 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/8001 (2013.01); H01L 2224/80047 (2013.01); H01L 2224/80204 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/95093 (2013.01); H01L 2924/1011 (2013.01); H01L 2924/182 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/37001 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor die assembly, comprising:
a lowermost semiconductor die having an upper surface and a first longitudinal footprint; and
two or more modules carried by the upper surface of the lowermost semiconductor die including at least a first module stacked on the lowermost die and a second module stacked on the first module, each of the two or more modules including:
a base semiconductor die having a second longitudinal footprint smaller than the first longitudinal footprint; and
one or more upper semiconductor dies having a third longitudinal footprint smaller than the second longitudinal footprint,
wherein the one or more upper semiconductor dies and the base semiconductor die are mechanically coupled via dielectric-dielectric bonds and electrically coupled via metal-metal bonds between adjacent ones of the one or more upper semiconductor dies and the base semiconductor die, and wherein the first module and the base semiconductor die in the second module are mechanically coupled via dielectric-dielectric bonds and electrically coupled via metal-metal bonds.