| CPC H01L 24/06 (2013.01) [H01L 24/49 (2013.01); H01L 27/1446 (2013.01); H01L 27/14636 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/48 (2013.01); H01L 27/14634 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/06165 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/09181 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49171 (2013.01)] | 18 Claims |

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1. A semiconductor element including an array in which a plurality of avalanche photodiodes is arranged, the semiconductor element comprising;
a plurality of first electrodes configured to receive supply of a first voltage to be used by the plurality of avalanche photodiodes from outside; and
at least one second electrode configured to receive supply of a second voltage from outside different from the first voltage,
wherein the plurality of first electrodes and the at least one second electrode are disposed outside the array, and
wherein the at least one second electrode is disposed between one and another one of the plurality of first electrodes,
wherein the semiconductor element has at least one long side and at least one short side on a periphery thereof,
wherein the plurality of first electrodes and the at least one second electrode are disposed in a region located outside the array and along the at least one long side,
wherein the at least one long side comprises two long sides, and the at least one short side comprises two short sides, and
wherein the plurality of first electrodes and the at least one second electrode are disposed in each of the regions along the two long sides.
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