US 12,278,190 B2
Manufacturing method of semiconductor package structure having interconnections between dies
Shing-Yih Shih, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on May 12, 2023, as Appl. No. 18/196,542.
Application 18/196,542 is a division of application No. 17/864,470, filed on Jul. 14, 2022.
Prior Publication US 2024/0021528 A1, Jan. 18, 2024
Int. Cl. H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01)
CPC H01L 23/5385 (2013.01) [H01L 23/5386 (2013.01); H01L 25/0652 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08225 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor package structure, comprising:
providing a first interposer including a first substrate and a first interconnect layer over the first substrate, wherein the first interconnect layer includes a first communication member and a second communication member;
providing a second interposer including a second substrate and a second interconnect layer over the second substrate, wherein the second interconnect layer includes a third communication member;
disposing a first die over the first interposer;
forming an intermediate structure including:
disposing a second die over the second interposer;
disposing a third die over the second interposer and adjacent to the second die; and
forming a first molding disposed over the second interposer and surrounding the second die and the third die;
disposing the intermediate structure over the first interposer; and
forming a second molding over the first interposer and surrounding the first die and the intermediate structure;
wherein the formation of the second molding includes disposing a molding material to surround the intermediate structure and the first die, and grinding the molding material to expose a top surface of the first die and a top surface of the first molding;
wherein the first interconnect layer includes a first bonding layer over the first substrate and a first bonding pad at least partially exposed through the first bonding layer, and the second interposer includes a second bonding layer formed under the second substrate and a second bonding pad at least partially exposed through the second bonding layer;
wherein the intermediate structure is disposed by bonding the second bonding layer to the first bonding layer and bonding the first bonding pad to the second bonding pad.