| CPC H01L 23/53238 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76847 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01)] | 7 Claims |
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1. A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement, comprising:
forming a damascene trench, including forming a dielectric base, with a trench made therein,
depositing two or more two dimensional diffusion barrier layers formed over the trench,
depositing a conductor layer formed atop the diffusion layer,
wherein the two or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base,
wherein each of the two or more two-dimensional diffusion barrier layers is a polycrystalline material selected from the group consisting of TaSex, TaTex, TiSx, TiSex, TiTex, and TaSx, and wherein x is between 1.5-1.9,
wherein a grain in one of the two or more two-dimensional diffusion barrier layers is misaligned with an adjacent grain in another of the two or more two-dimensional diffusion barrier lavers so that ions from the conductor layer would undergo both grain boundary diffusion and intralayer diffusion in order to diffuse through the boundary layer.
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