US 12,278,178 B2
Fuse element for process-induced damage protection structure
Michael J. Hauser, Albany, NY (US); and Michael J. Zierak, Colchester, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Jun. 29, 2022, as Appl. No. 17/809,610.
Prior Publication US 2024/0006309 A1, Jan. 4, 2024
Int. Cl. H01L 23/525 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/62 (2006.01)
CPC H01L 23/5256 (2013.01) [H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) structure, comprising:
a transistor in a device layer at least part of which is over a substrate, the transistor including a gate;
a plurality of interconnect layers over the device layer, the plurality of interconnect layers including a last metal layer;
the gate coupled to a well in the substrate through a conductor which includes a fuse element;
a first metal interconnect extending from a first terminal of the fuse element to a first pad in the last metal layer; and
a second metal interconnect extending from a second terminal of the fuse element to a second pad in the last metal layer.