US 12,278,174 B2
Power semiconductor device with a double island surface mount package
Cristiano Gianluca Stella, San Gregorio di Catania (IT); and Agatino Minotti, Mascalucia (IT)
Assigned to STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed on Apr. 24, 2023, as Appl. No. 18/306,119.
Application 18/306,119 is a continuation of application No. 17/142,738, filed on Jan. 6, 2021, granted, now 11,658,108.
Application 17/142,738 is a continuation of application No. 16/385,928, filed on Apr. 16, 2019, granted, now 10,910,302, issued on Feb. 2, 2021.
Claims priority of application No. 102018000004782 (IT), filed on Apr. 23, 2018.
Prior Publication US 2023/0282564 A1, Sep. 7, 2023
Int. Cl. H01L 23/498 (2006.01); H01L 23/373 (2006.01)
CPC H01L 23/49844 (2013.01) [H01L 23/3735 (2013.01); H01L 23/49822 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a conductive layer having:
a first protrusion;
a second protrusion;
a first recessed region adjacent to the first protrusion; and
a second recessed region adjacent to the second protrusion;
a first die having a first contact pad aligned with the first protrusion and coupled to the first protrusion;
a second die having a second contact pad aligned with the second protrusion and coupled to the second protrusion;
a first dielectric projecting region adjacent to the first contact pad and a second dielectric projection region adjacent to the second contact pad, the first dielectric projecting region extends into the first recessed region, the second dielectric projecting region extends into the second recessed region, and the first and second dielectric projecting regions are spaced apart from the conductive layer, extend towards the conductive layer, and have respective ends that are within a corresponding recessed region of the first and second recessed regions and that face towards the conductive layer; and
a conductive clip is between the first protrusion and the second protrusion, is between the first dielectric projecting region and the second dielectric projecting region, and extends outward from respective sidewalls of the first die and the second die.