| CPC H01L 23/481 (2013.01) [H01L 21/76898 (2013.01); H01L 23/49822 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/585 (2013.01); H01L 25/0657 (2013.01)] | 20 Claims |
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1. A method of forming a through-silicon via (TSV) structure, comprising:
forming a die comprising a semiconductor substrate, a substrate oxide layer disposed on a front side of the semiconductor substrate, a barrier line disposed on the substrate oxide layer, dielectric layers disposed on the substrate oxide layer and the barrier line, and a first seal ring that extends in a vertical direction from the barrier line into the substrate oxide layer;
etching a back side of the semiconductor substrate to form a trench that extends through the semiconductor substrate and inside of the first seal ring;
forming a diffusion barrier layer on sidewalls of the trench, such a portion of the substrate oxide layer is disposed between the diffusion barrier layer and the first seal ring in a lateral direction perpendicular to the vertical direction;
forming a seed layer on the diffusion barrier layer, a portion of the barrier line exposed at a bottom of the trench, and the back side of the semiconductor substrate;
forming a TSV material layer on the seed layer; and
performing a planarization process to remove the TSV material layer from the back side of the semiconductor substrate and form the TSV structure.
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