US 12,278,166 B2
High bandwidth package structure
Harry-Haklay Chuang, Hsinchu (TW); Wen-Tuo Huang, Tainan (TW); Wei-Cheng Wu, Hsinchu County (TW); Yu-Ling Hsu, Tainan (TW); Pai Chi Chou, Hsinchu (TW); and Ya-Chi Hung, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 2, 2022, as Appl. No. 17/831,040.
Prior Publication US 2023/0395466 A1, Dec. 7, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/481 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/76898 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a first workpiece that includes:
a first substrate comprising a logic transistor, and
a first interconnect structure disposed on a frontside of the first substrate;
providing a second workpiece that includes:
a second substrate comprising a memory device,
a second interconnect structure disposed on a frontside of the second substrate, and
a through via extending through a portion of the second substrate and a portion of the second interconnect structure;
forming a first bonding layer on the first interconnect structure;
forming a second bonding layer on the second interconnect structure;
bonding the second workpiece to the first workpiece by directly bonding the second bonding layer to the first bonding layer;
thinning the second substrate;
forming a protective film over the thinned second substrate;
forming a backside via opening through the protective film and the thinned second substrate to expose the through via; and
forming a backside through via in the backside via opening to physically couple to the through via.