US 12,278,151 B2
Semiconductor wafer seal ring having protrusion extending into trench in semiconductor substrate
Ming-Che Lee, Tainan (TW); Kuo-Ming Wu, Zhubei (TW); Sheng-Chau Chen, Tainan (TW); Hau-Yi Hsiao, Chiayi (TW); Guanyu Luo, Chiayi County (TW); Ping-Tzu Chen, Tainan (TW); and Cheng-Yuan Tsai, Chu-Pei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 21, 2022, as Appl. No. 17/699,717.
Claims priority of provisional application 63/288,751, filed on Dec. 13, 2021.
Prior Publication US 2023/0187294 A1, Jun. 15, 2023
Int. Cl. H01L 23/18 (2006.01); H01L 21/3105 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/18 (2013.01) [H01L 21/31051 (2013.01); H01L 23/5226 (2013.01); H01L 23/562 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80001 (2013.01); H01L 2924/37001 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor wafer structure, comprising:
a semiconductor substrate comprising a first semiconductor;
a plurality of semiconductor devices disposed along the semiconductor substrate;
a dielectric stack comprising a plurality of dielectric layers arranged over the semiconductor substrate;
a conductive interconnect structure within the dielectric stack; and
a seal ring layer over the dielectric stack and laterally surrounding the dielectric stack along a first sidewall of the dielectric stack, the seal ring layer comprising a first protrusion that extends into a first trench in the first semiconductor of the semiconductor substrate.