US 12,278,148 B2
Semiconductor structure and fabrication method
Zhen Yu Liu, Shanghai (CN)
Assigned to Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed on May 9, 2022, as Appl. No. 17/739,913.
Application 17/739,913 is a division of application No. 16/421,756, filed on May 24, 2019, granted, now 11,362,005.
Claims priority of application No. 201810663579.8 (CN), filed on Jun. 25, 2018.
Prior Publication US 2022/0262686 A1, Aug. 18, 2022
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 27/092 (2013.01); H01L 29/41725 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor substrate having a first region and a second region, wherein a surface of the first region of the semiconductor substrate contains a gate structure, a surface of the second region of the semiconductor substrate contains a dummy gate structure, and the semiconductor substrate under the dummy gate structure contains an isolation structure;
a bulk layer having a single flat reshaped surface formed in the semiconductor substrate at each of two sides of the gate structure, one end of the single flat reshaped surface being in contact with the gate structure, and another end of the single flat reshaped surface being in contact with the isolation structure, the one end of the single flat reshaped surface in contact with the gate structure being higher than a bottom surface of the gate structure, and the bulk layer being made of silicon germanium; and
a protective layer formed on the single flat reshaped surface of the bulk layer, the entire protective layer having a single uniform thickness, the protective layer being made of boron doped silicon.