US 12,278,147 B2
Semiconductor structure and method for forming the same
Tun-Jen Chang, Hsinchu (TW); Tung-Heng Hsieh, Zhudong Town (TW); and Bao-Ru Young, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 16, 2022, as Appl. No. 17/745,578.
Prior Publication US 2023/0369127 A1, Nov. 16, 2023
Int. Cl. H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01)
CPC H01L 21/823475 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
forming a first fin structure over a substrate;
forming a second fin structure over the substrate;
forming a first source/drain feature and a second source/drain feature over the first fin structure;
forming a third source/drain feature and a fourth source/drain feature over the second fin structure,
forming a dielectric material over the first source/drain feature and the second source/drain feature;
patterning the dielectric layer into multiple insulating features spaced apart from one another,
wherein the insulating features include a first insulating feature and a second insulating feature on opposite sides of the first source/drain feature, and a third insulating feature and a fourth insulating feature on opposite sides of the second source/drain feature, a first dimension of the first insulating feature in a first direction is greater than a second dimension of the second insulating feature in the first direction, a third dimension of the third insulating feature in the first direction is less than the first dimension of the first insulating feature, and a first distance between the first insulating feature and the second insulating feature is greater than a second distance between the third insulating feature and the fourth insulating feature,
wherein the insulating features further include a fifth insulating feature and a sixth insulating feature, the fifth insulating feature and the first insulating feature are located on opposite sides of the third source/drain feature, the sixth insulating feature and the third insulating feature are located on opposite sides of the fourth source/drain feature, and a third distance between the fifth insulating feature and the first insulating feature is less than a fourth distance between the sixth insulating feature and the third insulating feature; and
forming a conductive material in a first opening between the first insulating feature and the second insulating feature and in a second opening between the third insulating feature and the fourth insulating feature.