	US 12,278,141 B2
	Semiconductor devices and methods of manufacture
Kuo-Ju Chen, Taichung (TW); Shih-Hsiang Chiu, New Taipei (TW); Meng-Han Chou, Hsinchu (TW); Su-Hao Liu, Jhongpu Township (TW); Liang-Yin Chen, Hsinchu (TW); Huicheng Chang, Tainan (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 18, 2022, as Appl. No. 17/675,462.
Claims priority of provisional application 63/212,193, filed on Jun. 18, 2021.
Prior Publication US 2022/0406655 A1, Dec. 22, 2022
Int. Cl. H01L 21/76 (2006.01); H01L 21/31 (2006.01); H01L 21/3115 (2006.01); H01L 21/768 (2006.01)

CPC H01L 21/76825 (2013.01) [H01L 21/31155 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01)]

20 Claims

1. A method of manufacturing a semiconductor device, the method comprising:

generating a first ion beam from a first precursor;

sending the first ion beam through a valve gap to generate a first implantation ion beam, the first implantation ion beam having a first ratio of isotopes, the valve gap being adjustable and having a first distance during the sending the first ion beam;

adjusting the first distance of the valve gap to a second distance different from the first distance;

generating a second ion beam from the first precursor; and

sending the second ion beam through the valve gap with the second distance to generate a second implantation ion beam, the second implantation ion beam having a second ratio of isotopes different from the first ratio of isotopes.