US 12,278,139 B2
Manufacturing method of semiconductor device
Chi-Ming Chen, Hsinchu County (TW); Kuei-Ming Chen, New Taipei (TW); Po-Chun Liu, Hsinchu (TW); Chung-Yi Yu, Hsin-Chu (TW); and Chia-Shiung Tsai, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 1, 2023, as Appl. No. 18/363,725.
Application 18/363,725 is a division of application No. 17/461,991, filed on Aug. 30, 2021, granted, now 11,923,237.
Prior Publication US 2023/0377946 A1, Nov. 23, 2023
Int. Cl. H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76254 (2013.01) [H01L 21/76256 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method of a semiconductor device, comprising:
providing a sacrificial substrate;
forming an epitaxial layer on the sacrificial substrate;
forming an etch stop layer on the epitaxial layer;
implanting carbon atoms into the etch stop layer;
forming a capping layer and a device layer on the etch stop layer, wherein the device layer and the etch stop layer are located on two opposite sides of the capping layer;
bonding a handle substrate to the device layer; and
removing the sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms from the handle substrate.