US 12,278,125 B2
Integrated dry processes for patterning radiation photoresist patterning
Jengyi Yu, San Ramon, CA (US); Samantha S. H. Tan, Newark, CA (US); Mohammed Haroon Alvi, San Jose, CA (US); Richard Wise, Los Gatos, CA (US); Yang Pan, Los Altos, CA (US); Richard Alan Gottscho, Menlo Park, CA (US); Adrien Lavoie, Newberg, OR (US); Sivananda Krishnan Kanakasabapathy, Pleasanton, CA (US); Timothy William Weidman, Sunnyvale, CA (US); Qinghuang Lin, Yorktown Heights, NY (US); and Jerome S. Hubacek, Fremont, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Oct. 5, 2023, as Appl. No. 18/377,267.
Application 18/377,267 is a continuation of application No. 18/184,545, filed on Mar. 15, 2023.
Application 18/184,545 is a continuation of application No. 17/758,125, abandoned, previously published as PCT/US2021/040381, filed on Jul. 2, 2021.
Claims priority of provisional application 62/705,616, filed on Jul. 7, 2020.
Prior Publication US 2024/0145272 A1, May 2, 2024
Int. Cl. G03F 7/004 (2006.01); G03F 7/16 (2006.01); G03F 7/36 (2006.01); G03F 7/38 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/67225 (2013.01) [G03F 7/0042 (2013.01); G03F 7/16 (2013.01); G03F 7/167 (2013.01); G03F 7/168 (2013.01); G03F 7/36 (2013.01); G03F 7/38 (2013.01); H01L 21/6715 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An integrated lithography system, comprising:
a plurality of reaction chambers within a cluster, wherein at least one of the plurality of reaction chambers comprises a development chamber configured to expose a substrate to a dry development chemistry, a bake chamber configured to modify material properties of an EUV-sensitive organometallic photoresist (PR) after deposition of the EUV-sensitive organometallic PR on a substrate; and
a controller that includes one or more processors and one or more memory devices, wherein the one or more memory devices store computer-executable instructions for controlling the one or more processors to:
receive the substrate in the dry development chamber after the EUV-sensitive organometallic PR is exposed to EUV radiation in an EUV scanner tool to form a photopatterned organometallic PR, wherein the substrate comprises the photopatterned organometallic PR formed thereon; and
dry develop the photopatterned organometallic PR by removing either an exposed portion or an unexposed portion of the photopatterned organometallic PR through exposure to the dry development chemistry to form a PR mask, wherein the dry development chemistry comprises a halide-containing chemistry.