CPC H01L 21/67023 (2013.01) [H01L 21/02041 (2013.01)] | 5 Claims |
1. A substrate processing method using a substrate processing apparatus, the apparatus comprising a nozzle configured to discharge a processing liquid or inert gas onto an upper surface of a substrate and a supply line provided for supplying the processing liquid to the nozzle, the substrate processing method comprising:
discharging the processing liquid onto the upper surface of the substrate;
sucking the processing liquid remaining in the nozzle during a time when the discharging of the processing liquid onto the upper surface of the substrate is stopped; and
supplying the inert gas onto the upper surface of the substrate,
wherein each of the sucking of the processing liquid and the supplying of the inert gas onto the upper surface of the substrate comprises cooling the processing liquid,
wherein the cooling the processing liquid comprises supplying coolant to an outside of the supply line, and
wherein a flow rate of the coolant supplied in the sucking of the processing liquid and a flow rate of the coolant supplied in the supplying the inert gas are different from each other.
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