US 12,278,108 B2
Substrate processing method, method of manufacturing semiconductor device, non- transitory computer-readable recording medium and substrate processing apparatus
Arito Ogawa, Toyama (JP); and Kota Kowa, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Mar. 17, 2022, as Appl. No. 17/697,428.
Application 17/697,428 is a continuation of application No. PCT/JP2019/036603, filed on Sep. 18, 2019.
Prior Publication US 2022/0216061 A1, Jul. 7, 2022
Int. Cl. H01L 21/28 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/285 (2006.01)
CPC H01L 21/28568 (2013.01) [C23C 16/45534 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing method comprising
(a) forming a metal-containing film on the substrate by performing:
(a1) supplying a material gas containing metal and halogen to the substrate;
(a2) supplying a silicon-containing gas to the substrate while performing (a1); and
(a3) supplying a reactive gas to the substrate,
wherein (a1), (a2) and (a3) are performed a predetermined number of times in (a);
(b) supplying the silicon-containing gas to the substrate so as to perform:
(b-1) forming a first film on a surface of the metal-containing film; and
(c) forming a metal-containing multi-layer film structure on the substrate by alternately performing (a) and (b).