US 12,278,106 B2
Preparation method of semiconductor device
Jun Xia, Hefei (CN); and Shijie Bai, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Nov. 18, 2021, as Appl. No. 17/455,493.
Application 17/455,493 is a continuation of application No. PCT/CN2021/095835, filed on May 25, 2021.
Claims priority of application No. 202011229183.6 (CN), filed on Nov. 6, 2020.
Prior Publication US 2022/0148878 A1, May 12, 2022
Int. Cl. H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0332 (2013.01) [H01L 21/0274 (2013.01); H01L 21/31144 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A preparation method of a semiconductor device, comprising the following steps: providing a substrate and forming a mask layer with a plurality of first windows on the substrate; forming a dielectric layer, the dielectric layer at least covering sidewalls of the first windows; forming a first photoresist material layer, the first photoresist material layer covering the dielectric layer and the mask layer and filling the first windows; patterning the first photoresist material layer to form a patterned first photoresist layer, the patterned first photoresist layer exposing a top surface of the dielectric layer; by using the patterned first photoresist layer and the mask layer as masks, removing the dielectric layer to form second windows; removing part of the substrate along the second windows to form a patterned substrate; and after the step of removing part of the substrate along the second windows to form a patterned substrate, removing the mask layer and the patterned first photoresist layer from a surface of the substrate.