	US 12,278,103 B2
	Method of processing substrate and method of manufacturing semiconductor device by forming film
Takayuki Waseda, Toyama (JP); Takashi Nakagawa, Toyama (JP); Kimihiko Nakatani, Toyama (JP); Motomu Degai, Toyama (JP); Takao Izaki, Toyama (JP); and Yoshitomo Hashimoto, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Nov. 6, 2023, as Appl. No. 18/502,295.
Application 18/502,295 is a continuation of application No. 17/132,608, filed on Dec. 23, 2020, granted, now 11,848,203.
Claims priority of application No. 2019-237905 (JP), filed on Dec. 27, 2019.
Prior Publication US 2024/0071752 A1, Feb. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/04 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01)

CPC H01L 21/02312 (2013.01) [C23C 16/04 (2013.01); C23C 16/325 (2013.01); C23C 16/401 (2013.01); C23C 16/45534 (2013.01); C23C 16/45544 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/02126 (2013.01); H01L 21/0228 (2013.01); H01L 21/02304 (2013.01); H01L 21/02359 (2013.01)]

22 Claims

1. A method of processing a substrate, comprising:

(a) providing a substrate having a first surface and a second surface;

(b) modifying the first surface to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate; and

(c) forming a film on the second surface by supplying a precursor and an oxygen- and hydrogen-containing gas to the substrate after modifying the first surface.