US 12,278,102 B2
Semiconductor device with silicon nitride passivation film
Kazuhide Sumiyoshi, Osaka (JP); Masaya Okada, Osaka (JP); Kazutaka Inoue, Osaka (JP); and Takumi Yonemura, Osaka (JP)
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
Filed on Oct. 4, 2022, as Appl. No. 17/959,865.
Application 17/959,865 is a division of application No. 17/011,728, filed on Sep. 3, 2020, abandoned.
Claims priority of application No. 2019-161282 (JP), filed on Sep. 4, 2019; and application No. 2020-115056 (JP), filed on Jul. 2, 2020.
Prior Publication US 2023/0054259 A1, Feb. 23, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 21/0217 (2013.01) [H01L 21/02271 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a semiconductor stacking portion formed on the substrate, the semiconductor stacking portion including a plurality of nitride semiconductor layers;
a silicon nitride passivation film covering a surface of the semiconductor stacking portion; and
oxygen atoms existing at an interface between the silicon nitride passivation film and the semiconductor stacking portion;
wherein an interfacial oxygen content in oxygen atoms at the interface is 0.6×1015 atom/cm2 or less,
wherein the interface contains a silicon oxynitride ingredient in a Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) analysis, the silicon oxynitride ingredient including the oxygen atoms, and
wherein the silicon oxynitride ingredient has a secondary ion intensity larger than a secondary ion intensity of a gallium oxide ingredient at the interface in the TOF-SIMS analysis.