US 12,278,086 B2
Pattern height metrology using an e-beam system
Gian Francesco Lorusso, Overijse (BE); Mohamed Saib, Evere (BE); Alain Moussa, Genval (BE); Anne-Laure Charley, Hamme-Mille (BE); Danilo De Simone, Leuven (BE); and Joren Severi, Leuven (BE)
Assigned to IMEC VZW, Leuven (BE); and Katholieke Universiteit Leuven, Leuven (BE)
Filed by IMEC VZW, Leuven (BE); and Katholieke Universiteit Leuven, KU LEUVEN R&D, Leuven (BE)
Filed on Jun. 2, 2022, as Appl. No. 17/830,606.
Claims priority of application No. 21177290 (EP), filed on Jun. 2, 2021.
Prior Publication US 2022/0392742 A1, Dec. 8, 2022
Int. Cl. H01J 37/28 (2006.01); G03F 7/00 (2006.01); H01J 37/22 (2006.01); H01J 37/26 (2006.01)
CPC H01J 37/28 (2013.01) [G03F 7/70625 (2013.01); H01J 37/222 (2013.01); H01J 37/263 (2013.01); H01J 2237/24578 (2013.01); H01J 2237/2817 (2013.01); H01J 2237/2826 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device for determining a pattern height of a pattern produced with extreme ultraviolet, EUV, lithography in a resist film, the device comprising a processor configured to:
obtain a scanning electron microscope, SEM, image of the pattern from an SEM;
determine a contrast value related to the pattern based on the obtained SEM image; and
determine the pattern height based on calibration data and the determined contrast value.