US 12,277,975 B2
Non-volatile memory and operating method thereof
Li Xiang, Wuhan (CN); and Weihua Shi, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Apr. 3, 2024, as Appl. No. 18/625,956.
Application 18/625,956 is a continuation of application No. 17/568,622, filed on Jan. 4, 2022, granted, now 12,014,777.
Application 17/568,622 is a continuation of application No. PCT/CN2021/121714, filed on Sep. 29, 2021.
Prior Publication US 2024/0249773 A1, Jul. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01)
CPC G11C 16/08 (2013.01) [G11C 16/0483 (2013.01); G11C 16/24 (2013.01)] 20 Claims
OG exemplary drawing
 
17. A non-volatile memory, comprising:
a memory cell array;
word lines connected with the memory cell array; and
a voltage generator comprising:
a voltage source configured to provide a first voltage rising at a first slope and a pass voltage;
a first drive circuit coupled to the voltage source and an unselected word line of the word lines, the first drive circuit being configured to control the first voltage from the voltage source outputted to the unselected word line before the first voltage rises to a predetermined voltage; and
a second drive circuit coupled to the voltage generator and the unselected word line, the second drive circuit being configured to control the pass voltage from the voltage source outputted to the unselected word line of the word lines.