US 12,277,969 B2
Auto-referenced memory cell read techniques
Graziano Mirichigni, Vimercate (IT); Paolo Amato, Treviglio (IT); Federico Pio, Brugherio (IT); Alessandro Orlando, Naples (IT); and Marco Sforzin, Cernusco Sul Naviglio (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 10, 2024, as Appl. No. 18/661,300.
Application 17/062,127 is a division of application No. 16/791,764, filed on Feb. 14, 2020, granted, now 10,896,727, issued on Jan. 19, 2021.
Application 16/536,120 is a division of application No. 15/853,364, filed on Dec. 22, 2017, granted, now 10,431,301, issued on Oct. 1, 2019.
Application 18/661,300 is a continuation of application No. 17/697,567, filed on Mar. 17, 2022, granted, now 12,009,028.
Application 17/697,567 is a continuation of application No. 17/062,127, filed on Oct. 2, 2020, granted, now 11,282,574, issued on Mar. 22, 2022.
Application 16/791,764 is a continuation of application No. 16/536,120, filed on Aug. 8, 2019, granted, now 10,600,480, issued on Mar. 24, 2020.
Prior Publication US 2024/0386956 A1, Nov. 21, 2024
Int. Cl. G11C 7/10 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01); G11C 7/06 (2006.01)
CPC G11C 13/004 (2013.01) [G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 13/003 (2013.01); H10B 63/84 (2023.02); H10N 70/231 (2023.02); G11C 7/06 (2013.01); G11C 7/1006 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01); G11C 2213/76 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
applying a first read voltage to a first set of memory cells and a second read voltage to a second set of memory cells;
updating a first counter based at least in part on applying the first read voltage to the first set of memory cells;
updating a second counter based at least in part on applying the second read voltage to the second set of memory cells; and
reading the first set of memory cells based at least in part on updating the first counter and the second counter.