US 12,277,967 B2
Memory device and method for operating the same including setting a recovery voltage
Marco Sforzin, Cernusco sul Naviglio (IT); Paolo Amato, Treviglio (IT); and Innocenzo Tortorelli, Cernusco sul Naviglio (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 23, 2024, as Appl. No. 18/586,174.
Application 18/586,174 is a continuation of application No. 17/862,391, filed on Jul. 11, 2022, granted, now 11,915,750.
Application 17/862,391 is a continuation of application No. 16/959,556, granted, now 11,386,954, issued on Jul. 12, 2022, previously published as PCT/IB2019/001205, filed on Dec. 3, 2019.
Prior Publication US 2024/0194258 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 13/00 (2006.01); G11C 29/02 (2006.01); G11C 29/12 (2006.01)
CPC G11C 13/0033 (2013.01) [G11C 13/0004 (2013.01); G11C 13/0038 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 29/021 (2013.01); G11C 29/12005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a plurality of memory cells, comprising:
a first group of memory cells; and
a second group of memory cells programmed to a predefined logic state of the at least two logic states; and
a memory controller coupled to the plurality of memory cells and configured to carry out a recovery voltage setting operation to set the recovery voltage, the recovery voltage setting operation comprising:
applying a test voltage corresponding to a reading voltage applied to at least one selected memory cell of the first group of memory cells to the memory cells of the second group to assess a logic state thereof;
biasing a corresponding word line to a word line selection voltage lower than the reading voltage;
biasing other word lines to a deselection voltage intermediate between the word line selection voltage and the bit line reading voltage; and
setting the recovery voltage to a voltage based on a last iteration of application of the test voltage to the memory cells of the second group.