US 12,277,966 B2
Memory access module for performing a plurality of sensing operations to generate digital values of a storage cell in order to perform decoding of the storage cell
Tsung-Chieh Yang, Hsinchu (TW); Hsiao-Te Chang, Hsinchu County (TW); and Wen-Long Wang, Hsinchu (TW)
Assigned to Silicon Motion, Inc., Hsinchu County (TW)
Filed by Silicon Motion, Inc., Hsinchu County (TW)
Filed on Nov. 28, 2023, as Appl. No. 18/522,128.
Application 18/522,128 is a continuation of application No. 17/832,680, filed on Jun. 5, 2022, granted, now 11,869,584.
Application 17/832,680 is a continuation of application No. 17/075,689, filed on Oct. 20, 2020, granted, now 11,386,952, issued on Jul. 12, 2022.
Application 17/075,689 is a continuation of application No. 16/656,533, filed on Oct. 17, 2019, granted, now 10,854,285, issued on Dec. 1, 2020.
Application 16/656,533 is a continuation of application No. 16/127,240, filed on Sep. 11, 2018, granted, now 10,490,268, issued on Nov. 26, 2019.
Application 16/127,240 is a continuation of application No. 15/679,178, filed on Aug. 17, 2017, granted, now 10,102,904, issued on Oct. 16, 2018.
Application 15/679,178 is a continuation of application No. 15/426,070, filed on Feb. 7, 2017, granted, now 9,858,996, issued on Jan. 2, 2018.
Application 15/426,070 is a continuation of application No. 15/213,419, filed on Jul. 19, 2016, granted, now 9,627,050, issued on Apr. 18, 2017.
Application 15/213,419 is a continuation of application No. 14/956,410, filed on Dec. 2, 2015, granted, now 9,520,185, issued on Dec. 13, 2016.
Application 14/956,410 is a continuation of application No. 14/327,580, filed on Jul. 10, 2014, granted, now 9,239,685, issued on Jan. 19, 2016.
Application 14/327,580 is a continuation of application No. 13/944,866, filed on Jul. 17, 2013, granted, now 8,867,270, issued on Oct. 21, 2014.
Application 13/944,866 is a continuation of application No. 13/089,330, filed on Apr. 19, 2011, granted, now 8,508,991, issued on Aug. 13, 2013.
Claims priority of provisional application 61/325,811, filed on Apr. 19, 2010.
Prior Publication US 2024/0096411 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/56 (2006.01); G06F 3/06 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01)
CPC G11C 11/5642 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0622 (2013.01); G06F 3/0629 (2013.01); G06F 3/0638 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for performing memory access of a Flash cell of a Flash memory, comprising:
performing a series of sensing operations respectively corresponding to a plurality of sensing voltages, wherein a sensing voltage of a specific sensing operation of the series of sensing operations has a sensing voltage determined according to a result of an initial sensing operation of the series of sensing operations;
determining a threshold voltage of the Flash cell according to at least a digital value generated by the series of sensing operations; and
using the determined threshold voltage to perform soft decoding of the Flash cell;
wherein when a result of the initial sensing operation is that current flows through the Flash cell, the specific sensing operation will correspond to a sensing voltage which is less than a sensing voltage corresponding to the initial sensing operation; and when a result of the initial sensing operation is that current does not flow through the Flash cell, the specific sensing operation will correspond to a sensing voltage which is higher than a sensing voltage corresponding to the initial sensing operation.