US 12,277,960 B2
Modified top electrode contact for MRAM embedding in advanced logic nodes
Ashim Dutta, Clifton Park, NY (US); Dominik Metzler, Clifton Park, NY (US); Oscar van der Straten, Guilderland Center, NY (US); and Theodorus E. Standaert, Clifton Park, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 15, 2021, as Appl. No. 17/644,349.
Prior Publication US 2023/0186962 A1, Jun. 15, 2023
Int. Cl. H01L 23/00 (2006.01); G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 23/522 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [H01L 23/5226 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory pillar including a bottom electrode, a magnetic random-access memory stack above the bottom electrode and a top electrode above the magnetic random-access memory stack;
a bottom electrode contact structure located below, and in direct mechanical contact with and electrically connected to, the bottom electrode;
a first portion of an encapsulation layer located on opposite sidewalls of the bottom electrode, on opposite sidewalls of the magnetic random-access memory stack and on opposite sidewalls of a bottom portion of the top electrode, a second portion of the encapsulation layer located above a second dielectric layer;
a metal cap located above an uppermost surface and opposite sidewalls of a top portion of the top electrode, wherein the metal cap is in contact with an uppermost surface of the first portion of the encapsulation layer;
a second conductive interconnect above a top surface of the metal cap, the second conductive interconnect wrapping around opposite sidewalls of the first portion of the encapsulation layer and opposite sidewalls of the metal cap, and
a first conductive interconnect located below, and in direct mechanical contact with and electrically connected to, the bottom electrode contact structure.